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SDN2007-C - Dual-N Channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

The SDN2007-C uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

It is ESD protected.

This device is suitable for use as a Uni-directional or Bi-directional load switch, facilitated by its common-drain configuration.

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Datasheet Details

Part number SDN2007-C
Manufacturer SeCoS
File Size 609.15 KB
Description Dual-N Channel Enhancement Mode Power MOSFET
Datasheet download datasheet SDN2007-C Datasheet
Additional preview pages of the SDN2007-C datasheet.

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Full PDF Text Transcription

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Elektronische Bauelemente SDN2007-C 8A, 20V, RDS(ON) 15mΩ Dual-N Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION The SDN2007-C uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It is ESD protected. This device is suitable for use as a Uni-directional or Bi-directional load switch, facilitated by its common-drain configuration. DFN2x3-6J MARKING 2007 Lot Code PACKAGE INFORMATION Package MPQ DFN2×3-6J 3K Leader Size 7 inch ORDER INFORMATION Part Number Type SDN2007-C Lead (Pb)-free and Halogen-free REF. A B C D E Millimeter Min. Max. 1.95 2.05 2.95 3.05 0.203 REF. 0.5 BSC. 0.7 0.8 REF. F G H I L Millimeter Min. Max. 0 0.05 0.2 0.3 1.45 1.55 1.65 1.75 0.
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