Datasheet4U Logo Datasheet4U.com

SCP60N03S-C - N-Channel MOSFET

Datasheet Summary

Description

SCP60N03S-C uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

  • High density cell design for ultra low RDS(ON) Fully characterized avalanche voltage and current Good stability and uniformity with high EAS Excellent package for good heat dissipation Special processing technology for high ESD capability.

📥 Download Datasheet

Datasheet preview – SCP60N03S-C

Datasheet Details

Part number SCP60N03S-C
Manufacturer SeCoS
File Size 258.22 KB
Description N-Channel MOSFET
Datasheet download datasheet SCP60N03S-C Datasheet
Additional preview pages of the SCP60N03S-C datasheet.

📁 Similar Datasheet

  • SCP6C60 - SILICON CONTROLLED RECTIFIERS (Semiwell)
  • SCP-3337 - QUADRUPLE HALF-H DRIVER (Sensitron)
  • SCP-4095 - AMBIENT LIGHT SENSOR LOGARITHMIC HYBRID AMPLIFIER (Sensitron)
  • SCP-4167 - Three-Phase MOSFET/IGBT Bridge Driver (Sensitron)
  • SCP-4188 - Load Dump Protector (Sensitron)
  • SCP-4447 - HERMETIC HALF-BRIDGE MOSFET/IGBT GATE Driver (Sensitron)
  • SCP-4488 - BRIDGE RECTIFIER ASSEMBLY (Sensitron)
  • SCP-4926 - HV MOSFET Power Module (Sensitron)
  • SCP-4979 - HV IGBT Solid-State Switch (Sensitron)
  • SCP-5115 - Hermetic Half Bridge IGBT Module (Sensitron)
Other Datasheets by SeCoS

Full PDF Text Transcription

Click to expand full text
Elektronische Bauelemente SCP60N03S-C 60A, 30V, RDS(ON) 4.2mΩ N-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION SCP60N03S-C uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
Published: |