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SCG2019 - P-Channel Enhancement Mode MOSFET

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Description

These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation.

Trench Technology Supper high density cell design Excellent ON resistance Extremely Low Threshold Vol

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Datasheet Details

Part number SCG2019
Manufacturer SeCoS
File Size 696.10 KB
Description P-Channel Enhancement Mode MOSFET
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Elektronische Bauelemente SCG2019 -0.62A , -20V , RDS(ON) 810 m P-Channel Enhancement Mode MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. MECHANICAL DATA  Trench Technology  Supper high density cell design  Excellent ON resistance  Extremely Low Threshold Voltage APPLICATION  DC-DC converter circuit  Load Switch MARKING P9   = Date Code PACKAGE INFORMATION Package MPQ SOT-523 3K Leader Size 7 inch SOT-523 A M 3 Top View CB 1 2 K L E 3 1 2 D F G H J REF. A B C D E F Millimeter Min. Max. 1.5 1.7 1.45 1.75 0.7 0.9 0.7 0.9 0.9 1.1 0.15 0.
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