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PZT4401 - Epitaxial Planar Transistor

General Description

The PZT4401 is designed for general purpose switching and amplifier applications.

Key Features

  • High Power Dissipation: 1500mW at 25 oC.
  • High DC Current Gain: 100~300 at 150mA.
  • Complementary to PZT4403 440 1.

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📁 Similar Datasheet

Part Number Description Manufacturer
PZT4401 NPN switching transistor NXP
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Elektronische Bauelemente Description RoHS Compliant Product The PZT4401 is designed for general purpose switching and amplifier applications. PZT4401 NPN Transistor Epitaxial Planar Transistor SOT-223 Features *High Power Dissipation: 1500mW at 25 oC *High DC Current Gain: 100~300 at 150mA *Complementary to PZT4403 440 1 ABSOLUTE MAXIMUM RATINGS Ta=25oC Symbol Parameter VCBO Collector-Base Voltage VCEO VEBO IC Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Continous) PD Total Power Dissipation TJ,Tstg Junction and Storage Temperature REF. A C D E I H Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 0 10 0.60 0.80 0.25 0.35 REF. B J 1 2 3 4 5 Millimeter Min. Max. 13 TYP. 2.30 REF. 6.30 6.70 6.30 6.70 3.30 3.70 3.30 3.70 1.40 1.