Download BAV199 Datasheet PDF
SeCoS Halbleitertechnologie GmbH
BAV199
Features Forward Current IF: 215 m A Reverse Voltage 1 2 VR: 70 V Operating and storage junction temperature range TJ, Tstg: -55 to +150 o C Marking JY Marking JY Top View SOT-23 Dim Min Max A 2.800 3.040 B 1.200 1.400 C 0.890 1.110 D 0.370 0.500 G 1.780 2.040 H 0.013 0.100 J 0.085 0.177 K 0.450 0.600 L 0.890 1.020 S 2.100 2.500 V 0.450 0.600 All Dimension in mm ELECTRICAL CHARACTERISTICS (Tamb=25o C unless otherwise specified) Parameter Reverse breakdown voltage Reverse voltage leakage current Symbol V(BR) IR Test conditions IR= 100µA VR=70V MIN MAX 70 UNIT V n A Forward voltage Diode capacitance Reverse recovery time IF=1m A VF IF=10m A IF=50m A IF=150m A CD VR=0V, f=1MHz t rr 900 1000 1100 1250 3 m V p F µS http://.Se Co SGmb H. 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 1 of 2 Elektronische Bauelemente Switching Diode Plastic-Encapsulate Diode http://.Se Co SGmb H. 01-Jun-2002 Rev. A Any...