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2SB1260 - PNP Plastic Encapsulated Transistor

Key Features

  • High breakdown voltage and high current BVCEO=-80V, IC=-1A Good hFE linearity Complements to 2SD1898 SOT-89 A 1 B 2 C 3 E EC 4.

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Elektronische Bauelemente 2SB1260 -1 A, -80 V PNP Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES High breakdown voltage and high current BVCEO=-80V, IC=-1A Good hFE linearity Complements to 2SD1898 SOT-89 A 1 B 2 C 3 E EC 4 PACKAGE INFORMATION Weight: 0.05 g (approximately) MARKING ZL 1 Base Collector 24 3 Emitter BD F REF. A B C D E F G H J Millimeter Min. Max. 4.40 4.60 3.94 4.25 1.40 1.60 2.30 2.60 1.50 1.70 0.89 1.20 K L REF. G H J K L Millimeter Min. Max. 0.40 0.58 1.50 TYP 3.00 TYP 0.32 0.52 0.35 0.