Datasheet4U Logo Datasheet4U.com

SSU07N65SL - N-Channel MOSFET

Datasheet Summary

Description

The SSU07N65SL is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications .

Features

  • Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available 2 Drain REF. A b L4 C L3 L1 E Millimeter Min. Max. 4.00 4.85 0.51 1.00 0.00 0.30 0.30 0.74 1.50 REF 1.78 2.79 9.60 10.67 REF. c2 b2 D e L L2 Millimeter Min. Max. 1.10 1.65 1.34 REF 8.0 9.65 2.54 REF 14.6 15.88 1.27 REF 1 Gate 3 Source.

📥 Download Datasheet

Datasheet preview – SSU07N65SL

Datasheet Details

Part number SSU07N65SL
Manufacturer SeCoS Halbleitertechnologie
File Size 568.28 KB
Description N-Channel MOSFET
Datasheet download datasheet SSU07N65SL Datasheet
Additional preview pages of the SSU07N65SL datasheet.

📁 Similar Datasheet

  • SSU102N08S-C - N-Channel MOSFET (SeCoS)
  • SSU12N70H-C - N-Channel Super Junction Power MOSFET (SeCoS)
  • SSU130N06S-C - N-Ch Enhancement Mode Power MOSFET (SeCoS)
  • SSU130N06SV-C - N-Channel Shielded Gate Trench Power MOSFET (SeCoS)
  • SSU1N50B - 520V N-Channel MOSFET (Fairchild Semiconductor)
  • SSU1N60A - Advanced Power MOSFET (Fairchild Semiconductor)
  • SSU1N60B - 600V N-Channel MOSFET (Fairchild Semiconductor)
  • SSU24N60H-C - N-Channel Super Junction Power MOSFET (SeCoS)
  • SSU2N60A - Advanced Power MOSFET (Fairchild Semiconductor)
  • SSU2N60B - 600V N-Channel MOSFET (Fairchild Semiconductor)
Other Datasheets by SeCoS Halbleitertechnologie

Full PDF Text Transcription

Click to expand full text
SSU07N65SL Elektronische Bauelemente 7A , 650V , RDS(ON) 1.4Ω N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION The SSU07N65SL is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications . TO-263 FEATURES Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available 2 Drain REF. A b L4 C L3 L1 E Millimeter Min. Max. 4.00 4.85 0.51 1.00 0.00 0.30 0.30 0.74 1.50 REF 1.78 2.79 9.60 10.67 REF. c2 b2 D e L L2 Millimeter Min. Max. 1.10 1.65 1.34 REF 8.0 9.65 2.54 REF 14.6 15.88 1.
Published: |