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SSU04N65 - N-Channel MOSFET

Datasheet Summary

Description

The SSU04N65 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications .

Features

  •  Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available  Drain Date Code Millimeter Min. Max. 4.00 4.85 0.68 1.00 0.00 0.30 0.36 0.53 1.50 REF 2.29 2.79 9.60 10.45 Millimeter Min. Max. 1.10 1.45 1.34 REF 8.0 9.15 2.54 REF 14.6 15.85 1.27 REF.

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Datasheet Details

Part number SSU04N65
Manufacturer SeCoS Halbleitertechnologie
File Size 419.03 KB
Description N-Channel MOSFET
Datasheet download datasheet SSU04N65 Datasheet
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Full PDF Text Transcription

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SSU04N65 Elektronische Bauelemente 4A , 650V , RDS(ON) 2.6Ω N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION The SSU04N65 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications . TO-263   FEATURES       Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available  Drain Date Code Millimeter Min. Max. 4.00 4.85 0.68 1.00 0.00 0.30 0.36 0.53 1.50 REF 2.29 2.79 9.60 10.45 Millimeter Min. Max. 1.10 1.45 1.34 REF 8.0 9.15 2.54 REF 14.6 15.85 1.27 REF MARKING 4N65   Gate REF. A b L4 C L3 L1 E REF.
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