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SSRF10N60SL - N-Channel MOSFET

Datasheet Summary

Description

The SSRF10N60SL is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications .

Features

  • Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available M A H J K L Millimeter Min. Max. 14.60 16.50 9.50 10.50 12.60 14.00 4.30 5.10 2.30 3.2 2.30 3.10 0.30 0.75 C G F REF. H J K L M N Millimeter Min. Max. 2.70 4.00 0.90 1.50 0.50 0.95 2.34 2.74 2.40 3.60 φ 3.0 φ 3.4 2 Drain L REF. A B C D E F G 1 Gate 3 Source.

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Datasheet preview – SSRF10N60SL

Datasheet Details

Part number SSRF10N60SL
Manufacturer SeCoS Halbleitertechnologie
File Size 489.94 KB
Description N-Channel MOSFET
Datasheet download datasheet SSRF10N60SL Datasheet
Additional preview pages of the SSRF10N60SL datasheet.

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Full PDF Text Transcription

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SSRF10N60SL Elektronische Bauelemente 10A , 600V , RDS(ON) 1Ω N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION The SSRF10N60SL is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications . ITO-220 B N D E FEATURES Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available M A H J K L Millimeter Min. Max. 14.60 16.50 9.50 10.50 12.60 14.00 4.30 5.10 2.30 3.2 2.30 3.10 0.30 0.75 C G F REF. H J K L M N Millimeter Min. Max. 2.70 4.00 0.90 1.50 0.50 0.95 2.34 2.74 2.40 3.60 φ 3.0 φ 3.4 2 Drain L REF.
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