Datasheet4U Logo Datasheet4U.com

SMS501DE - N-Channel MOSFET

Datasheet Summary

Description

SMS501DE is the highest performance trench N-ch MOSFETs with extreme high cell density, which provides excellent RDS(on) and gate charge for most synchronous buck converter applications.

Features

  • Advanced high cell density Trench technology Super low gate charge Excellent CdV/dt effect decline Green device available.

📥 Download Datasheet

Datasheet preview – SMS501DE

Datasheet Details

Part number SMS501DE
Manufacturer SeCoS Halbleitertechnologie
File Size 558.84 KB
Description N-Channel MOSFET
Datasheet download datasheet SMS501DE Datasheet
Additional preview pages of the SMS501DE datasheet.

📁 Similar Datasheet

Other Datasheets by SeCoS Halbleitertechnologie

Full PDF Text Transcription

Click to expand full text
Elektronische Bauelemente SMS501DE 0.03A, 600V, RDS(ON) 700 Ω N-Ch Depletion Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION SMS501DE is the highest performance trench N-ch MOSFETs with extreme high cell density, which provides excellent RDS(on) and gate charge for most synchronous buck converter applications. FEATURES Advanced high cell density Trench technology Super low gate charge Excellent CdV/dt effect decline Green device available MARKING 501DE PACKAGE INFORMATION Package MPQ SOT-23 3K Leader Size 7 inch SOT-23 A L 3 Top View CB 12 KE 1 3 2 D F GH J REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.10 2.65 1.20 1.40 0.89 1.15 1.78 2.04 0.30 0.50 REF. G H J K L Millimeter Min. Max. 0.09 0.18 0.35 0.65 0.08 0.20 0.
Published: |