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SDG5521C - N and P-Ch Enhancement Mode Power MOSFET

Description

These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation.

Features

  • Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe DFN2.
  • 3 saves board space. Fast switching speed. High performance trench technology. REF. A B C D E.

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Datasheet Details

Part number SDG5521C
Manufacturer SeCoS Halbleitertechnologie
File Size 93.46 KB
Description N and P-Ch Enhancement Mode Power MOSFET
Datasheet download datasheet SDG5521C Datasheet

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Full PDF Text Transcription

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SDG5521C Elektronische Bauelemente N-Ch: 5A, 20V, RDS(ON) 58 mΩ P-Ch: -4.7A, -20V, RDS(ON) 77 mΩ N & P-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. DFN2*3 FEATURES Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe DFN2*3 saves board space. Fast switching speed. High performance trench technology. REF.
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