D2025
DESCRIPTION
- With TO-220Fa package
- High DC current gain
- Low saturation voltage
- DARLINGTON
- plement to type 2SB1344
..
APPLICATIONS
- For low frequency power amplifier and power driver applications
PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-220Fa) and symbol DESCRIPTION
Absolute maximum ratings(Ta=25 )
SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector -emitter voltage Emitter-base voltage Collector current Collector current-peak Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 30 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE 100 100 7 8 10 2 W UNIT V V V A A
Savant IC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD2025
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN TYP. MAX UNIT
SYMBOL
V(BR)CEO
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Collector-emitter breakdown voltage
IC=5m A; IB=0
V(BR)CBO
Collector-base breakdown voltage
IC=50µA;...