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SB80W10T - 8A Rectifier

Features

  • Schottky Barrier Diode (Twin Type.
  • Cathode Common) 100V, 8A Rectifier.
  • VF max=0.8V IR max=0.1mA.
  • Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRRM Conditions Ratings 100 105 50Hz resistive load, sine wave Tc=62°C 50Hz resistive load, sine wave Tc=121°C.

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Ordering number : ENA1817 SB80W10T SANYO Semiconductors DATA SHEET SB80W10T Features • Schottky Barrier Diode (Twin Type • Cathode Common) 100V, 8A Rectifier • VF max=0.8V IR max=0.1mA • Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRRM Conditions Ratings 100 105 50Hz resistive load, sine wave Tc=62°C 50Hz resistive load, sine wave Tc=121°C 50Hz sine wave, 1 cycle 8 4 40 --55 to +150 --55 to +150 Unit V V A A A °C °C VRSM IO*1 IO*2 IFSM Tj Tstg Note) *1. Indicates the total value *2. Value per element Package Dimensions unit : mm (typ) 7518-001 6.5 5.0 1.5 4 2.3 0.
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