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RG2006LN - Low VF / High-Speed Switching Diode

Features

  • High breakdown voltage (VRRM=600V).
  • High reliability.
  • One-point fixing type plastic mold package facilitating easy mounting and heat dissipation.
  • Fast reverse recovery time.
  • Low noise at the time of reverse recovery. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Peak Output Current Surge Forward Current Junction Temperature Storage Tempe.

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Other Datasheets by SANYO (now Panasonic)

Part Number Description

Full PDF Text Transcription

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Ordering number : ENA1434 RG2006LN SANYO Semiconductors DATA SHEET RG2006LN Diffused Junction Silicon Diode Low VF • High-Speed Switching Diode Features • High breakdown voltage (VRRM=600V). • High reliability. • One-point fixing type plastic mold package facilitating easy mounting and heat dissipation. • Fast reverse recovery time. • Low noise at the time of reverse recovery.
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