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LC3564B - 64K (8192-word 8-bit) SRAM

Features

  • Supply voltage range: 2.7 to 5.5 V.
  • In 5-V operation mode: 5.0 V ±10%.
  • In 3-V operation mode: 3.0 V ±10%.
  • Address access time (tAA).
  • In 5-V operation mode: LC3564B, BS, BM, and BT-70: 70 ns (max) LC3564B, BS, BM, and BT-10: 100 ns (max).
  • In 3-V operation mode: LC3564B, BS, BM, and BT-70: 200 ns (max) LC3564B, BS, BM, and BT-10: 500 ns (max).
  • Ultralow standby current.
  • In 5-V operation mode: 1.0 µA (Ta ≤ 70°C), 3.0 µA (Ta ≤ 8.

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Other Datasheets by SANYO (now Panasonic)

Part Number Description
LC3564BM 64K (8192-word 8-bit) SRAM
LC3564BS 64K (8192-word 8-bit) SRAM
LC3564BT 64K (8192-word 8-bit) SRAM
LC3564BT-10 64K (8192-word 8-bit) SRAM
LC3564BT-70 64K (8192-word 8-bit) SRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : EN5804A CMOS IC LC3564B, BS, BM, BT-70/10 64K (8192-word × 8-bit) SRAM with OE, CE1, and CE2 Control Pins Overview The LC3564B, LC3564BS, LC3564BM, and LC3564BT are 8192-word × 8-bit asynchronous silicon gate CMOS SRAMs. These are full CMOS type SRAMs that adopt a six-transistor memory cell and feature fast access times, low operating power dissipation, and an ultralow standby current. These SRAMs provide three control signal inputs: an OE input for high-speed memory access, and two chip enable lines, CE1 and CE2, for low power mode and device selection. These means that these SRAMs area ideal for systems that require low power and battery backup, and that they support easy memory expansion.
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