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K2919 - 2SK2919

Key Features

  • Low ON resistance.
  • Ultrahigh-speed switching.
  • On-chip high-speed diode (trr=100ns). Package Dimensions unit:mm 2128 [2SK2919] 8.2 7.8 6.2 3 0.6 4.2 0.4 0.2 1.2 8.4 10.0 0.7 12 1.0 1.0 2.54 2.54 5.08 10.0 6.0 2.5 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Tc=.

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Full PDF Text Transcription for K2919 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for K2919. For precise diagrams, and layout, please refer to the original PDF.

Ordering number:ENN6121 N-Channel Silicon MOSFET 2SK2919 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed switching. · On-chip high-...

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ures · Low ON resistance. · Ultrahigh-speed switching. · On-chip high-speed diode (trr=100ns). Package Dimensions unit:mm 2128 [2SK2919] 8.2 7.8 6.2 3 0.6 4.2 0.4 0.2 1.2 8.4 10.0 0.7 12 1.0 1.0 2.54 2.54 5.08 10.0 6.0 2.

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