High-speed diode (trr=140ns). Package Dimensions
unit:mm
2052C
[2SK1924]
10.2 3.6 5.1
4.5 1.3
2.7 6.3
15.1
18.0 5.6
1.2
2.7 14.0
0.8 123
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse)
Symbol
VDSS VGSS
ID IDP
Allowable Power Dissipation
PD
Channel Temperature Storage Temperature
Tch Tstg
Tc=25°C
Electrical Cha.
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
K1924. For precise diagrams, and layout, please refer to the original PDF.
Ordering number:EN4313 N-Channel Silicon MOSFET 2SK1924 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed switching. · High-speed dio...
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res · Low ON resistance. · Ultrahigh-speed switching. · High-speed diode (trr=140ns). Package Dimensions unit:mm 2052C [2SK1924] 10.2 3.6 5.1 4.5 1.3 2.7 6.3 15.1 18.0 5.6 1.2 2.7 14.0 0.8 123 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Symbol VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Storage Temperature Tch Tstg Tc=25°C Electrical Characteristics at Ta = 25˚C 2.
K1924 Datasheet
