e. · Meets radial taping. N-Channel Silicon MOSFET 2SK1730 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2087A [2SK1730] 2.5 1.45 6.9 1.0 4.0 1.0 4.5 1.0 0.9 1 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Electrical Characteristics at Ta = 25˚C 2.