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K1069 - 2SK1069

Key Features

  • Adoption of FBET process.
  • Ultrasmall-sized package permitting 2SK1069- applied sets to be made smaller and slimmer. Package Dimensions unit:mm 2058 [2SK1069] 0.425 0.3 3 0.15 0 to 0.1 0.2 2.1 1.250 12 0.65 0.65 2.0 0.3 0.6 0.9 0.425 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VDSX VGDS IG ID PD Tj Tstg Co.

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Full PDF Text Transcription for K1069 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for K1069. For precise diagrams, and layout, please refer to the original PDF.

Ordering number:EN2749 N-Channel Junction Silicon FET 2SK1069 Low-Frequency General-Purpose Amplifier Applications Applications · Low-frequency general-purpose amplifiers...

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r Applications Applications · Low-frequency general-purpose amplifiers. · Ideal for use in variable resistors, analog switches, low-frequency amplifiers, and constant-current circuits. Features · Adoption of FBET process. · Ultrasmall-sized package permitting 2SK1069- applied sets to be made smaller and slimmer. Package Dimensions unit:mm 2058 [2SK1069] 0.425 0.3 3 0.15 0 to 0.1 0.2 2.1 1.250 12 0.65 0.65 2.0 0.3 0.6 0.9 0.