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J584 - 2SJ584

Features

  • Low ON-resistance.
  • Ultrahigh-speed switching.
  • Micaless package facilitating mounting. Package Dimensions unit:mm 2078B [2SJ584LS] 10.0 3.5 7.2 4.5 2.8 3.2 16.1 16.0 0.9 1.2 14.0 3.6 0.75 1 2 3 2.4 0.7 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty c.

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www.DataSheet4U.com Ordering number:ENN6410 P-Channel Silicon MOSFET 2SJ584LS Ultrahigh-Speed Switching Applications Features · Low ON-resistance. · Ultrahigh-speed switching. · Micaless package facilitating mounting. Package Dimensions unit:mm 2078B [2SJ584LS] 10.0 3.5 7.2 4.5 2.8 3.2 16.1 16.0 0.9 1.2 14.0 3.6 0.75 1 2 3 2.4 0.7 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Tc=25°C 2.55 2.55 1 : Gate 2 : Drain 3 : Source SANYO : TO-220FI-LS Conditions 0.6 Ratings –250 ±30 –4.5 –18 2.
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