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Ordering number:ENN6421
Features
· Low ON resistance. · Ultrahigh-speed switching. · 4V drive.
P-Channel Silicon MOSFET
2SJ348
Ultrahigh-Speed Switching Applications
Package Dimensions
unit:mm
2052C
[2SJ348]
10.2 3.6 5.1
4.5 1.3
2.7 6.3
15.1
18.0 5.6
1.2
2.7 14.0
0.8 123
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse)
Symbol
VDSS VGSS
ID IDP
Allowable Power Dissipation
PD
Channel Temperature Storage Temperature
Tch Tstg
Conditions
PW≤10µs, duty cycle≤1% Tc=25˚C
2.
J348 Datasheet
