Capable of efficient drive with small internal loss due to excellent tf. Package Dimensions
unit:mm
2010C
[2SD1159]
10.2 3.6 5.1
4.5 1.3
2.7 6.3
15.1
18.0 5.6
1.2
2.7 14.0
0.8 123
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP PC Tj
Tstg
Electric.
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
D1159. For precise diagrams, and layout, please refer to the original PDF.
Ordering number:EN837E NPN Triple Diffused Planar Silicon Transistor 2SD1159 TV Horizontal Deflection Output, High-Current Switching Applications Features · Capable of ef...
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n Output, High-Current Switching Applications Features · Capable of efficient drive with small internal loss due to excellent tf. Package Dimensions unit:mm 2010C [2SD1159] 10.2 3.6 5.1 4.5 1.3 2.7 6.3 15.1 18.0 5.6 1.2 2.7 14.0 0.
D1159 Datasheet
