C4824
Features
- Adoption of FBET process.
- High Gain Bandwidth product (f T=400MHz).
- High breakdown voltage (VCEO=120V).
- Small reverse transfer capacitance and excellent high-frequency characteristic : Cre=1.7p F/NPN, 2.2p F/PNP.
- Usage of radial taping to meet automatic mounting.
2.6 1.4
1.0 7.5
1.6 0.5 1 2 3
( ) : 2SA1850
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Colletor Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions
1 : Emitter 2 : Collector 3 : Base SANYO : FLP
Ratings (- )120 (- )120 (- )3 (- )200 (- )400 1.3 150
- 55 to +150
Unit V V V m A m A W
˚C ˚C
Electrical Characteristics at Ta = 25˚C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Symbol ICBO IEBO h FE1 h FE2 VCB=(- )80V, IE=0 VEB=(- )2V, IC=0 VCE=(- )10V, IC=(- )10m A VCE=(- )10V,...
