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B903 - 2SB903

Features

  • Low collector-to-emitter saturation voltage : VCE(sat)=(.
  • )0.5V (PNP), 0.4V (NPN) max.
  • Large current capacity. Package Dimensions unit:mm 2010C [2SB903/2SD1212] ( ) : 2SB903 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Symbol VCBO VCEO VEBO IC ICP PC Junction Temperature Storage Temperature Tj Tstg Tc=25˚C.

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Part Number Description
B904 2SB904

Full PDF Text Transcription

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Ordering number:990C PNP/NPN Epitaxial Planar Silicon Transistors 2SB903/2SD1212 30V/12A High-Speed Switching Applications Applications · Suitable for relay drivers, high-speed inverters, converters, and other general large-current switching applications. Features · Low collector-to-emitter saturation voltage : VCE(sat)=(–)0.5V (PNP), 0.4V (NPN) max. · Large current capacity.
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