B826 - 2SB826

Datasheet Summary

Features

Low-saturation collector-to-emitter voltage : VCE(sat)=.
0.5V (PNP), 0.4V (NPN) max.
Wide ASO leading to high resistance to breakdown. Package Dimensions unit:mm 2010C [2SB826/2SD1062] ( ) : 2SB826 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP.

Sanyo

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Datasheet Details

Part number	B826
Manufacturer	Sanyo
File Size	102.00 KB
Description	2SB826
Datasheet	B826 Datasheet
Additional preview pages of the B826 datasheet.

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Full PDF Text Transcription

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Ordering number:723H PNP/NPN Epitaxial Planar Silicon Transistors 2SB826/2SD1062 50V/12A Switching Applications Applications · Relay drivers, high-speed inverters, converters, and other general high-current switching applications. Features · Low-saturation collector-to-emitter voltage : VCE(sat)=–0.5V (PNP), 0.4V (NPN) max. · Wide ASO leading to high resistance to breakdown.

Published: May 31, 2015 |