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B1266 - 2SB1266

Features

  • Suitable for sets whose heighit is restricted.
  • Wide ASO (adoption of MBIT process).
  • High reliability. Package Dimensions unit:mm 2049B [2SB1266/2SD1902] ( ) : 2SB1266 Specifications E : Emitter C : Collector B : Base SANYO : TO-220MF Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol V.

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Other Datasheets by SANYO (now Panasonic)

Part Number Description
B1267 PNP/NPN Epitaxial Planar Silicon Transistors
B1268 PNP/NPN Epitaxial Planar Silicon Transistors
B1205 2SB1205
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Full PDF Text Transcription

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Ordering number:EN2538A PNP/NPN Triple Diffused Planar Type Silicon Transistors 2SB1266/2SD1902 AF Power Amplifier Applications Features · Suitable for sets whose heighit is restricted. · Wide ASO (adoption of MBIT process). · High reliability. Package Dimensions unit:mm 2049B [2SB1266/2SD1902] ( ) : 2SB1266 Specifications E : Emitter C : Collector B : Base SANYO : TO-220MF Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25˚C Conditions Ratings (–)60 (–)60 (–)6 (–)3 (–)8 1.
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