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J306 - 2SJ306

Datasheet Summary

Features

  • Low ON resistance.
  • Ultrahigh-speed switching.
  • Low-voltage drive.
  • Micaless package facilitating mounting. Package Dimensions unit:mm 2063A [2SJ306] 10.0 3.2 4.5 2.8 3.5 7.2 16.0 18.1 5.6 14.0 1.6 1.2 0.75 1 2 3 2.55 2.4 0.7 2.55 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID.

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Datasheet Details

Part number J306
Manufacturer Sanyo Semiconductor
File Size 123.72 KB
Description 2SJ306
Datasheet download datasheet J306 Datasheet
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Full PDF Text Transcription

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www.DataSheet4U.com Ordering number:EN4316 P-Channel Silicon MOSFET 2SJ306 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package facilitating mounting. Package Dimensions unit:mm 2063A [2SJ306] 10.0 3.2 4.5 2.8 3.5 7.2 16.0 18.1 5.6 14.0 1.6 1.2 0.75 1 2 3 2.55 2.4 0.7 2.55 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Tc=25˚C 2.55 2.55 1 : Gate 2 : Drain 3 : Source SANYO : TO-220ML Conditions 2.4 Ratings –250 ±30 –3 –12 2.
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