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VEC2307 - P-Channel Silicon MOSFET General-Purpose Switching Device

Features

  • P-Channel Silicon MOSFET General-Purpose Switching Device.

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Full PDF Text Transcription

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Ordering number : ENA0113 VEC2307 www.DataSheet4U.com VEC2307 Features • • • • P-Channel Silicon MOSFET General-Purpose Switching Device Applications The best suited for load switches. 4V drive. Composite type, facilitaing high-density mounting. Mount height 0.75mm. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm)1unit Mounted on a ceramic board (900mm2!0.8mm) Conditions Ratings --30 ±20 --2 --8 0.9 1.
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