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TS7994 - NPN Triple Diffused Planar Silicon Transistor

Key Features

  • High speed.
  • High breakdown voltage (VCBO=1600V).
  • High reliability (Adoption of HVP process).
  • Adoption of MBIT process. Package Dimensions unit:mm 2048B-TO3PBL [TS7994] 6.0 20.0 ø3.3 5.0 26.0 2.0 3.4 20.7 2.0 1.0 0.6 1.2 5.45 5.45 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Colletctor-to-Base Voltage Colletctor-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction.

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Ordering number :EN5962 NPN Triple Diffused Planar Silicon Transistor TS7994 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • High speed. • High breakdown voltage (VCBO=1600V). • High reliability (Adoption of HVP process). • Adoption of MBIT process. Package Dimensions unit:mm 2048B-TO3PBL [TS7994] 6.0 20.0 ø3.3 5.0 26.0 2.0 3.4 20.7 2.0 1.0 0.6 1.2 5.45 5.45 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Colletctor-to-Base Voltage Colletctor-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tc=25˚ C Tj Tstg Conditions Ratings 1600 800 6 25 50 3.