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Ordering number : ENN*0000
SGF9
N-Channel GaAs MESFET
SGF9
For C to X-band Local Oscillator and Amplifier
Preliminary Features
•
Package Dimensions
unit : mm 0000
[SGF9]
3
•
•
Mold package-owing to the cross-mold technology, this product can maintain the same performance as the ceramic package. The chip surface is covered with the highly reliable protection film. Automatic surface mounting is available.
.05 ±0 1.8
0.5 ±0.05
2
1.8 ±0 .05
2
1 0.4
+0.1 0.1 --0.015
±0.02
0 to 0.1
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VDS VGS ID PD Tj Tstg Conditions
4.1 ±0.1
1 : Drain 2 : Source 3 : Gate
Ratings 6.0 --5.