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LE28FV4001M - 4MEG (52488 x 8 Bits) Flash Memory

Features

  • Highly reliable 2 layer polysilicon CMOS flash EEPROM process.
  • Read and write operations using a 3.3 V single-voltage power supply.
  • High-speed access: 200 and 250 ns.
  • Low power.
  • Operating (read): 10 mA (maximum).
  • Standby: 20 µA (maximum).
  • Highly reliable read write.
  • Number of sector write cycles: 104 cycles.
  • Data retention: 10 years.
  • Address and data latches.
  • Sector erase function: 256 bytes per se.

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Other Datasheets by SANYO (now Panasonic)

Part Number Description
LE28FV4001R 4MEG (52488 x 8 Bits) Flash Memory
LE28FV4001R-20 4MEG (52488 x 8 Bits) Flash Memory
LE28FV4001R-25 4MEG (52488 x 8 Bits) Flash Memory
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LE28F4001C 4M-Bit (512k 8) Flash EEPROM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : EN*5468 CMOS LSI LE28FV4001M, T, R-20/25 4MEG (52488 × 8 Bits) Flash Memory Preliminary Overview The LE28FV4001M, T, R Series are 4 MEG flash memory products that feature a 542488-word × 8-bit organization and 3.3 V single-voltage power supply operation. CMOS peripheral circuits were adopted for high speed, low power, and ease of use. The LE28FV4001M also supports high-speed data rewriting by providing a sector (256 bytes) erase function. Package Dimensions unit: mm 3205-SOP32 [LE28FV4001M. T, R] Features • Highly reliable 2 layer polysilicon CMOS flash EEPROM process • Read and write operations using a 3.
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