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LE28DW1621T - 16 Megabit FlashBank Memory

Description

The LE28DW1621T consists of two memory banks, Bank1 is a 256K x 16 bits or 512K x 8 sector mode flash EEPROM and Bank2 is a 768K x 16 bits or 1536K x 8 sector mode flash EEPROM, manufactured with SANYO's proprietary, high performance FlashTechnology.

Features

  • 1 Sp ec ifi ca tio ns.
  • Single 3.0-Volt Read and Write Operations.
  • Separate Memory Banks by Address Space.
  • Bank1: 4Mbit (256K x 16 / 512K x 8) Flash.
  • Bank2: 12Mbit (768K x 16 / 1536K x 8) Flash.
  • Simultaneous Read and Write Capability Read Access Time.
  • 80 ns Latched Address and Data End of Write Detection.
  • Toggle Bit / Data # Polling / RY/BY#.

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Full PDF Text Transcription

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16 Megabit FlashBank Memory LE28DW1621T-80T (Draft3) FEATURES: 1 Sp ec ifi ca tio ns • • • • • • • • • • Single 3.
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