Attachment workability is good by Mica-less package.
Avalanche resistance guarantee. Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature Storage Temperature Avalanche Energy (Single Pulse).
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
K4097. For precise diagrams, and layout, please refer to the original PDF.
www.DataSheet4U.com Ordering number : ENA0775 2SK4097LS SANYO Semiconductors DATA SHEET 2SK4097LS N-Channel Silicon MOSFET General-Purpose Switching Device Applications F...
View more extracted text
Channel Silicon MOSFET General-Purpose Switching Device Applications Features • Low ON-resistance, low input capacitance, ultrahigh-speed switching. • Adoption of high reliability HVP process. • Attachment workability is good by Mica-less package. • Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *3 Avalanche Current *4 *1 Shows chip capability *2 Package limited *3 VDD=99V, L=5mH, IAV=9.