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K2395 - N-Channel Junction Silicon FET

Key Features

  • Large | yfs |.
  • Small Ciss.
  • Ultralow noise figure. Package Dimensions unit:mm 2034A [2SK2395] 4.0 2.2 0.4 0.5 0.4 0.4 0.6 1.8 15.0 3.0 123 1.3 1.3 0.7 0.7 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VDSX VGDS IG ID PD Tj Tstg Electrical Characteristics at Ta = 25˚C 3.0 3.8nom Conditions Parameter Symbo.

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Full PDF Text Transcription for K2395 (Reference)

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Ordering number:ENN4840 N-Channel Junction Silicon FET 2SK2395 Low-Noise HF Amplifier Applications Applications · AM tuner RF amplifier. · Low-noise amplifier. Features ·...

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pplications · AM tuner RF amplifier. · Low-noise amplifier. Features · Large | yfs |. · Small Ciss. · Ultralow noise figure. Package Dimensions unit:mm 2034A [2SK2395] 4.0 2.2 0.4 0.5 0.4 0.4 0.6 1.8 15.0 3.0 123 1.3 1.3 0.7 0.7 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VDSX VGDS IG ID PD Tj Tstg Electrical Characteristics at Ta = 25˚C 3.0 3.