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K1460 - 2SK1460

Key Features

  • Low ON-state resistance.
  • Ultrahigh-speed switching.
  • Micaless package facilitating mounting. Package Dimensions unit:mm 2078B [2SK1460] 10.0 3.5 4.5 2.8 3.2 7.2 16.0 16.1 0.9 1.2 14.0 3.6 0.7 0.75 1 2 3 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty.

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Full PDF Text Transcription for K1460 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for K1460. For precise diagrams, and layout, please refer to the original PDF.

Ordering number:EN3463A N-Channel Silicon MOSFET 2SK1460 Ultrahigh-Speed Switching Applications Features · Low ON-state resistance. · Ultrahigh-speed switching. · Micales...

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ures · Low ON-state resistance. · Ultrahigh-speed switching. · Micaless package facilitating mounting. Package Dimensions unit:mm 2078B [2SK1460] 10.0 3.5 4.5 2.8 3.2 7.2 16.0 16.1 0.9 1.2 14.0 3.6 0.7 0.75 1 2 3 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Tc=25°C 2.55 2.55 1 : Gate 2 : Drain 3 : Source SANYO : TO-220FI (LS) Conditions 2.4 0.6 1.2 Ratings 900 ±30 3.5 7 2.0 40 150 –55 to +150 U

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