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Ordering number : ENN7625
2SJ652
P-Channl Silicon MOSFET
2SJ652
General-Purpose Switching Device Applications
Features
• • • •
Package Dimensions
unit : mm 2063A
[2SJ652]
10.0 3.2
3.5 7.2
Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter.
4.5 2.8
18.1
16.0
5.6
14.0
1.6 1.2 0.75
2.4 0.7
2.55
1 2 3 2.55
2.4
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Tc=25°C Conditions
1 : Gate 2 : Drain 3 : Source SANYO : TO-220ML
Ratings --60 ±20 --28 --112 2.0 30 150 --55 to +150 Unit V V A A W W °C °C
2.
J652 Datasheet
