Datasheet4U Logo Datasheet4U.com

C5689 - 2SC5689

Key Features

  • Package Dimensions unit : mm 2174A [2SC5689] 16.0 5.0 High speed. High breakdown voltage(VCBO=1500V). High reliability(Adoption of HVP process). Adoption of MBIT process. On-chip damper diode. 3.4 5.6 3.1 8.0 22.0 21.0 4.0 2.8 2.0 20.4 0.7 0.9 1 2 5.45 3 3.5 0.8 2.1 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PMLH Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
C5684 2SC5684 Toshiba
C5686 2SC5686 Panasonic
C5604 2SC5604 NEC
C5609 2SC5609 Panasonic Semiconductor
C5612 2SC5612 Toshiba Semiconductor

Other Datasheets by SANYO (now Panasonic)

Part Number Description
C5680 2SC5680
C5681 2SC5681
C5682 2SC5682
C5683 2SC5683
C5610 2SC5610

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Ordering number : ENN6654A 2SC5689 NPN Triple Diffused Planar Silicon Transistor 2SC5689 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • • • Package Dimensions unit : mm 2174A [2SC5689] 16.0 5.0 High speed. High breakdown voltage(VCBO=1500V). High reliability(Adoption of HVP process). Adoption of MBIT process. On-chip damper diode. 3.4 5.6 3.1 8.0 22.0 21.0 4.0 2.8 2.0 20.4 0.7 0.9 1 2 5.45 3 3.5 0.8 2.