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Ordering number:EN3699A
NPN Triple Diffused Planar Silicon Transistor
2SC4630
900V/100mA High-Voltage Amplifier, High-Voltage Switching Applications
Features
· High breakdown voltage (VCEO min=900V). · Small Cob (typical Cob=2.8pF). · Full isolation package. · High reliability (Adoption of HVP process).
Package Dimensions
unit:mm 2079B
[2SC4630]
10.0 4.5 2.8
3.5
3.2
7.2 16.0
16.1
0.9 1.2
3.6
0.75 1 2 3
14.0
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions
2.55
2.55
1 : Base 2 : Collector 3 : Emitter SANYO : TO-220FI (LS)
2.
C4630 Datasheet
