Datasheet4U Logo Datasheet4U.com

C3998 - 2SC3998

Key Features

  • High speed (tf=100ns typ).
  • High breakdown voltage (VCBO=1500V).
  • High reliability (adoption of HVP process).
  • Adoption of MBIT process. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Electrical Characteristics at Ta=25.

📥 Download Datasheet

Full PDF Text Transcription for C3998 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for C3998. For precise diagrams, and layout, please refer to the original PDF.

Ordering number : EN2732A 2SC3998 SANYO Semiconductors DATA SHEET 2SC3998 NPN Triple Diffused Planar Silicon Transistor Ultrahigh-Definition CRT Display Horizontal Deflec...

View more extracted text
Silicon Transistor Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • High speed (tf=100ns typ). • High breakdown voltage (VCBO=1500V). • High reliability (adoption of HVP process). • Adoption of MBIT process.

More Datasheets from SANYO (now Panasonic)

Part Number Description
C3990 2SC3990
C3996 2SC3996
C3997 2SC3997
C3902 2SC3902
C3920 2SC3920
C3953 2SC3953
C3987 2SC3987