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B1140 - 2SB1140

Features

  • Adoption of FBET, MBIT processes.
  • Low saturation voltage.
  • Large current capacity.
  • Short switching time. 1.6 0.8 1.4 3.3 3.0 1.5 3.0 0.8 0.75 7.5 15.5 11.0 0.7 1 2 3 4.8 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB.

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Other Datasheets by SANYO (now Panasonic)

Part Number Description
B1143 2SB1143
B1144 2SB1144
B1134 2SB1134

Full PDF Text Transcription

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w w w . D a t a S h e e t 4 U . n e t Ordering number:ENN2069A PNP Epitaxial Planar Silicon Transistor 2SB1140 20V/5A Switching Applications Applications · Strobes, power supplies, relay drivers, lamp drivers. Package Dimensions unit:mm 2042B [2SB1140] 8.0 1.0 4.0 1.0 Features · Adoption of FBET, MBIT processes. · Low saturation voltage. · Large current capacity. · Short switching time. 1.6 0.8 1.4 3.3 3.0 1.5 3.0 0.8 0.75 7.5 15.5 11.0 0.7 1 2 3 4.
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