2SK3119 - N-Channel MOSFET

Product Overview

Sanyo Semicon Device

Part number	2SK3119
Manufacturer	Sanyo Semicon Device
File Size	149.03 KB
Description	N-Channel MOSFET
Datasheet	2SK3119 Datasheet
Additional preview pages of the 2SK3119 datasheet.

Low ON resistance.
Ultrahigh-speed switching.
2.5V drive. Package Dimensions unit:mm 2062A [2SK3119] 4.5 1.6 1.5 0.4 3 1.5 2 3.0 0.75 0.5 1 1.0 4.25max 2.5 0.4 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Tc=25˚C Mounted on a ceramic board (.

📁 Similar Datasheet

2SK311 - N-Channel MOSFET Transistor (Inchange Semiconductor)
2SK311 - (2SK310 / 2SK311) SILICON N-CHANNEL MOS FET (Hitachi Semiconductor)
2SK3110 - N-Channel MOSFET (NEC)
2SK3111 - N-Channel MOSFET (NEC)
2SK3112 - SWITCHING N-CHANNEL POWER MOSFET (NEC)
2SK3113 - SWITCHING N-CHANNEL POWER MOSFET (NEC)
2SK3113B - MOS FIELD EFFECT TRANSISTOR (NEC)
2SK3114 - SWITCHING N-CHANNEL POWER MOS FET (NEC)

Other Datasheets by Sanyo Semicon Device

Published: Mar 30, 2005 |