2SK2151
Features
- Low ON resistance.
- Ultrahigh-speed switching.
- Low-voltage drive.
N-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
Package Dimensions unit:mm
2062A
[2SK2151] 4.5 1.6
1.0 2.5 4.25max
0.4 0.5
32 1.5 3.0
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse)
Symbol
VDSS VGSS
ID IDP
Allowable Power Dissipation
Channel Temperature Storage Temperature
Tch Tstg
Conditions
PW≤10µs, duty cycle≤1% Tc=25°C Mounted on a ceramic board (250mm2× 0.8mm)
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage Gate-to-Source Breakdown Voltage Zero-Gate Votlage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Marking : KI
V(BR)DSS V(BR)GSS
IDSS IGSS VGS(off) | yfs |
RDS(on)1 RDS(on)2
ID=1m A, VGS=0 IG=±100µA,...
