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2SD2120 - NPN Epitaxial Planar Silicon Transistor

Key Features

  • Darlington connection (Contains bias resistance, damper diode).
  • High DC current gain.
  • Less dependence of DC current gain on temperature. Package Dimensions unit:mm 2064A [2SD2120] 2.5 1.45 6.9 1.0 4.0 1.0 4.5 1.0 0.9 1 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:EN3239 NPN Epitaxial Planar Silicon Transistor 2SD2120 General Driver Applications Features · Darlington connection (Contains bias resistance, damper diode). · High DC current gain. · Less dependence of DC current gain on temperature. Package Dimensions unit:mm 2064A [2SD2120] 2.5 1.45 6.9 1.0 4.0 1.0 4.5 1.0 0.9 1 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Electrical Characteristics at Ta = 25˚C 2.