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2SC5540 - NPN TRANSISTOR

Key Features

  • High cutoff frequency : fT=10GHz typ.
  • High gain : S21e2=13dB typ (f=1GHz).
  • Low noise : NF=1.3dB typ (f=1GHz).
  • Small Cob : Cob=0.4pF typ.
  • Ultrasmall, slim flat-lead package. (1.4mm × 0.8mm × 0.6mm) Package Dimensions unit:mm 2159 [2SC5540] 1.4 0.3 0.25 3 0.1 0.8 0.2 0.3 1 0.45 2 1.4 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissi.

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Other Datasheets by SANYO (now Panasonic)

Part Number Description
2SC5541 NPN TRANSISTOR
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:ENN6280 NPN Epitaxial Planar Silicon Transistor 2SC5540 UHF to S Band Low-Noise Amplifier and OSC Applications Features · High cutoff frequency : fT=10GHz typ. · High gain : S21e2=13dB typ (f=1GHz). · Low noise : NF=1.3dB typ (f=1GHz). · Small Cob : Cob=0.4pF typ. · Ultrasmall, slim flat-lead package. (1.4mm × 0.8mm × 0.6mm) Package Dimensions unit:mm 2159 [2SC5540] 1.4 0.3 0.25 3 0.1 0.8 0.2 0.3 1 0.45 2 1.4 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Conditions 1 : Base 2 : Emitter 3 : Collector SANYO : SSFP 0.6 Ratings 16 8 1.