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2SC4865 - NPN Epitaxial Planar Silicon Transistor

Features

  • Low noise : NF=1.1dB typ (f=1GHz).
  • High gain : S21e2=12.5dB typ (f=1GHz).
  • High cutoff frequency : fT=7.0GHz typ. Package Dimensions unit:mm 2110A 1.9 [2SC4865] 0.95 0.95 0.4 43 0.16 0 to 0.1 1.5 0.5 2.5 12 0.95 0.85 2.9 0.6 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO.

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Other Datasheets by SANYO (now Panasonic)

Part Number Description
2SC4860 NPN Epitaxial Planar Silicon Transistor
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2SC4867 NPN Epitaxial Planar Silicon Transistor

Full PDF Text Transcription

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Ordering number:EN4760 NPN Epitaxial Planar Silicon Transistor 2SC4865 VHF to UHF Wide-Band Low-Noise Amplifier Applications Features · Low noise : NF=1.1dB typ (f=1GHz). · High gain : S21e2=12.5dB typ (f=1GHz). · High cutoff frequency : fT=7.0GHz typ. Package Dimensions unit:mm 2110A 1.9 [2SC4865] 0.95 0.95 0.4 43 0.16 0 to 0.1 1.5 0.5 2.5 12 0.95 0.85 2.9 0.
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