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2SC4291 - NPN Triple Diffused Planar Silicon Transistor

Key Features

  • High speed (tf=0.3µs max).
  • High breakdown voltage (VCBO=1500V).
  • High reliability (adoption of HVP process).
  • Adoption of MBIT process.
  • On-chip damper diode. Package Dimensions unit:mm 2022A [2SC4291] 15.6 3.2 14.0 4.8 2.0 1.3 1.2 3.5 15.0 20.0 2.6 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Sym.

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Ordering number:EN2679A NPN Triple Diffused Planar Silicon Transistor 2SC4291 Ultrahigh-Definition Color Display Horizontal Deflection Output Applications Features · High speed (tf=0.3µs max). · High breakdown voltage (VCBO=1500V). · High reliability (adoption of HVP process). · Adoption of MBIT process. · On-chip damper diode. Package Dimensions unit:mm 2022A [2SC4291] 15.6 3.2 14.0 4.8 2.0 1.3 1.2 3.5 15.0 20.0 2.6 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Symbol VCBO VCEO VEBO IC ICP PC Junction Temperature Storage Temperature Tj Tstg Tc=25˚C 1.6 2.0 1.0 123 0.6 5.45 5.45 Conditions 1.4 20.0 1.4 0.