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2SC3996 - Silicon NPN Transistor

Key Features

  • High speed (tf=100ns typ).
  • High reliability (adoption of HVP process).
  • High breakdown voltage (VCBO=1500V).
  • Adoption of MBIT process. Package Dimensions unit:mm 2048B [2SC3996] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Elec.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:EN2509C NPN Triple Diffused Planar Silicon Transistor 2SC3996 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features · High speed (tf=100ns typ). · High reliability (adoption of HVP process). · High breakdown voltage (VCBO=1500V). · Adoption of MBIT process.