Datasheet4U Logo Datasheet4U.com

2SC3951 - Silicon NPN Transistor

Datasheet Summary

Features

  • High fT : fT=600MHz.
  • High breakdown voltage : VCEO=70Vmin.
  • Small reverse transfer capacitance and excellent high -frequency characteristic : Cre=1.9pF/NPN, 2.4pF/PNP.
  • Complementary PNP and NPN types.
  • Adoption of FBET process.
  • Micaless type. ( ) : 2SA1536 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Peak Collector Current Collector Dissipation.

📥 Download Datasheet

Datasheet preview – 2SC3951

Datasheet Details

Part number 2SC3951
Manufacturer Sanyo Semicon Device
File Size 113.82 KB
Description Silicon NPN Transistor
Datasheet download datasheet 2SC3951 Datasheet
Additional preview pages of the 2SC3951 datasheet.

📁 Similar Datasheet

  • 2SC3957 - Silicon NPN Transistor (Hitachi Semiconductor)
  • 2SC395A - SILICON NPN TRANSISTOR (Toshiba)
  • 2SC3900 - Epitaxial Planar Silicon Transistor (Sanyo)
  • 2SC3901 - PNP / NPN EPITAXIAL PLANAR SILICON TRANSISTORS (Sanyo)
  • 2SC3901 - Silicon NPN transistor (BLUE ROCKET ELECTRONICS)
  • 2SC3902 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SC3902 - Bipolar Transistor (ON Semiconductor)
  • 2SC3902 - Silicon NPN transistor (BLUE ROCKET ELECTRONICS)
  • 2SC3902 - NPN Transistor (INCHANGE)
  • 2SC3904 - Silicon NPN Transistor (Panasonic Semiconductor)
Other Datasheets by Sanyo Semicon Device
  • 2SC3950 - Silicon NPN Transistor
  • 2SC3952 - Silicon NPN Transistor
  • 2SC3953 - Silicon NPN Transistor
  • 2SC3954 - Silicon NPN Transistor
  • 2SC3955 - Silicon NPN Transistor
  • 2SC3956 - Silicon NPN Transistor
  • 2SC3902 - PNP/NPN Transistors
  • 2SC3912 - PNP/NPN Epitaxial Planar Silicon Transistors

Full PDF Text Transcription

Click to expand full text
Ordering number:EN2435A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1536/2SC3951 High-Definition CRT Display Video Output Applications Applications · High definition CRT display video output, wide-band amplifier. Features · High fT : fT=600MHz. · High breakdown voltage : VCEO=70Vmin. · Small reverse transfer capacitance and excellent high -frequency characteristic : Cre=1.9pF/NPN, 2.4pF/PNP. · Complementary PNP and NPN types. · Adoption of FBET process. · Micaless type.
Published: |