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2SA1967 - NPN Triple Diffused Planar Silicon Transistor

Key Features

  • High breakdown voltage (VCEO min=.
  • 900V).
  • Small Cob (Cob typ=2.2pF).
  • High reliability (Adoption of HVP process). Package Dimensions unit:mm 2010C [2SA1967] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Electrical Characteristi.

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Ordering number:5182 NPN Triple Diffused Planar Silicon Transistor 2SA1967 High-Voltage Amplifier, High-Voltage Switching Applications Features · High breakdown voltage (VCEO min=–900V). · Small Cob (Cob typ=2.2pF). · High reliability (Adoption of HVP process).