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2SA1529 - PNP/NPN Epitaxial Planar Silicon Transistors

Key Features

  • On-chip bias resistance : R1=2.2kΩ, R2=2.2kΩ.
  • Large current capacity : IC=500mA. Package Dimensions unit:mm 2003A [2SA1529/2SC3923] ( ) : 2SA1529 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions Electrical Characteristics at Ta =.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:EN2153A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1529/2SC3923 Switching Applications (with Bias Resistance) Applications · Switching circuits, inverter circuits, interface circuits, driver circuits. Features · On-chip bias resistance : R1=2.2kΩ, R2=2.2kΩ. · Large current capacity : IC=500mA.